RHEED intensity oscillations observed during the MBE growth of InSb(100)DROOPAD, R; WILLIAMS, R. L; PARKER, S. D et al.Semiconductor science and technology. 1989, Vol 4, Num 2, pp 111-113, issn 0268-1242Article

A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratioGERBER, D. S; DROOPAD, R; MARACAS, G. N et al.IEEE photonics technology letters. 1993, Vol 5, Num 1, pp 55-58, issn 1041-1135Article

Comparison of electroabsorption in asymmetric triangular and rectangular GaAs/Al_xGa_1-xAs multiple quantum wellsGERBER, D. S; DROOPAD, R; MARACAS, G. N et al.Applied physics letters. 1993, Vol 62, Num 5, pp 525-527, issn 0003-6951Article

1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 μS/μmHILL, R. J. W; DROOPAD, R; FEJES, P et al.Electronics Letters. 2008, Vol 44, Num 7, pp 498-500, issn 0013-5194, 3 p.Article

Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxyDROOPAD, R; YU, Z; RAMDANI, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 87, Num 3, pp 292-296, issn 0921-5107Conference Paper

The (3 × 2) phase of Ba adsorption on Si(001)-2 × 1HU, X; YAO, X; PETERSON, C. A et al.Surface science. 2000, Vol 445, Num 2-3, pp 256-266, issn 0039-6028Article

Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxySHIRALAGI, K. T; PUECHNER, R. A; CHOI, K. Y et al.Journal of crystal growth. 1991, Vol 114, Num 3, pp 337-345, issn 0022-0248Article

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III―V NMOSOXLAND, R; CHANG, S. W; BHUWALKA, K et al.IEEE electron device letters. 2012, Vol 33, Num 4, pp 501-503, issn 0741-3106, 3 p.Article

Structure of V thin films on Al(100) using XPD, LEED, and LEISPRIYANTHA, W; DROOPAD, R; KOPCZYK, M et al.Surface science. 2012, Vol 606, Num 15-16, pp 1160-1166, issn 0039-6028, 7 p.Article

In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxyPRIYANTHA, W; RADHAKRISHNAN, G; DROOPAD, R et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 103-106, issn 0022-0248, 4 p.Conference Paper

Gate dielectrics on compound semiconductorsDROOPAD, R; PASSLACK, M; ENGLAND, N et al.Microelectronic engineering. 2005, Vol 80, pp 138-145, issn 0167-9317, 8 p.Conference Paper

Comparative study of Sr and Ba adsorption on Si(1 0 0)XIAOMING HU; YU, Z; CURLESS, J. A et al.Applied surface science. 2001, Vol 181, Num 1-2, pp 103-110, issn 0169-4332Article

Low temperature GaAs grown by gas source molecular beam epitaxyDROOPAD, R; SHIRALAGI, K. T; PUECHNER, R. A et al.Journal of crystal growth. 1992, Vol 120, Num 1-4, pp 200-205, issn 0022-0248Conference Paper

Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfacesDROOPAD, R; PUECHNER, R. A; SHIRALAGI, K. T et al.Applied physics letters. 1991, Vol 58, Num 16, pp 1777-1779, issn 0003-6951, 3 p.Article

MOVPE-grown InAs/AlAs_0.16Sb_0.84/InAs and InAs/AlA_0.16Sb_0.84/GaSb heterostructuresRAMVALL, P; WANG, C. H; ASTROMSKAS, G et al.Journal of crystal growth. 2013, Vol 374, pp 43-48, issn 0022-0248, 6 p.Article

Pseudomorphic InGaAs/GaAs and GaAs/AlGaAs asymmetric triangular quantum wells grown by MBE for optoelectronic device applicationsDROOPAD, R; GERBER, D. S; CHOI, C et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 606-610, issn 0022-0248Conference Paper

In Situ spectroscopic ellipsometry in molecular beam epitaxyMARACAS, G. N; EDWARDS, J. L; SHIRALAGI, K et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 4, pp 1832-1839, issn 0734-2101, 2Conference Paper

Optical properties of quantum wells grown upon gas source molecular-beam epitaxy low-temperature buffersSHIRALAGI, K. T; PUECHNER, R. A; CHOI, K. Y et al.Journal of applied physics. 1991, Vol 69, Num 11, pp 7942-7944, issn 0021-8979, 3 p.Article

A generalized model for the reconstructioN of {001} surfaces of III-V compound semiconductors based on a rheed stutdy of InSb(001)DE OLIVEIRA, A. G; PARKER, S. D; DROOPAD, R et al.Surface science. 1990, Vol 227, Num 1-2, pp 150-156, issn 0039-6028, 7 p.Article

Protective overlayer techniques for preparation of InSb(001) surfacesEVANS, S. D; CAO, L. L; EGDELL, R. G et al.Surface science. 1990, Vol 226, Num 1-2, pp 169-179, issn 0039-6028Article

MBE growth and quantum transport measurements of spike-doped InSb and InAsWILLIAMS, R. L; SKURAS, E; STRADLING, R. A et al.Semiconductor science and technology. 1990, Vol 5, Num 3S, pp S338-S341, issn 0268-1242Conference Paper

Residual donor contamination in MOCVD, MOMBE and MBE GaAs studied by far-infrared spectroscopyHOLMES, S; PHILLIPS, C. C; PLASS, C et al.Semiconductor science and technology. 1989, Vol 4, Num 9, pp 782-790, issn 0268-1242, 9 p.Article

180 nm metal gate, high-k dielectric, implant-free III-V MOSFETs with transconductance of over 425 μS/μmHILL, R. J. W; MORAN, D. A. J; LI, X et al.Electronics Letters. 2007, Vol 43, Num 9, pp 543-545, issn 0013-5194, 3 p.Article

Elastic anomaly for SrTiO₃ thin films grown on Si(001)AGUIRRE-TOSTADO, F. S; HERRERA-GOMEZ, A; WOICIK, J. C et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 20, pp 201403.1-201403.4, issn 1098-0121, 2Article

Crystalline oxide-based devices on silicon substratesEISENBEISER, K; DROOPAD, R; YU, Z et al.Journal of electronic materials. 2003, Vol 32, Num 8, pp 868-871, issn 0361-5235, 4 p.Conference Paper